Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 6, 2009Applied Physics Letters

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C

View Full Paper
Ask AI
Bookmark
Share

Authors

ZLZ. H. LiuNanyang Technological UniversitySAS. ArulkumaranNagoya UniversityGNGeok Ing NgAgency for Science, Technology and Research

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Liu et al. (2009) studied this question.

synapsesocial.com/papers/6a9c3a65ffd7d9c476c536dfhttps://doi.org/10.1063/1.3114422
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ultralow resistance Si-containing Ti∕Al∕Mo∕Au Ohmic contacts with large processing window for AlGaN∕GaN heterostructures2006 · 33 citations
  2. 2Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes2001 · 80 citations
  3. 3Semiconducting and other major properties of gallium arsenide1982 · 2,501 citations
  4. 4Mobility of electrons in a AlGaN/GaN QW: Effect of temperature, applied field, surface roughness and well width2005 · 24 citations
  5. 5Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates1998 · 100 citations