We have investigated in a systematic way the interface properties of Fe 2 O 3 grown on different buffer layers using an electron beam deposition technique. For films deposited directly onto Si(001) substrate and on Al buffer layer, we observed the presence of metallic Fe at the Si(001) and Al interfaces, respectively. We also detected the presence of SiO 2 and Al 2 O 3 by x-ray photoelectron spectroscopy. For Fe 2 O 3 films deposited on Cu buffer layer, however, no other phases were observed at the interface. We explain our results using the enthalpy of formation. The enthalpy of formation of SiO 2 and Al 2 O 3 is much lower than that of Fe 2 O 3 , thus inhibiting the crystalline growth of Fe 2 O 3 at the interface. The enthalpy of formation of CuO is, however, greater than that of Fe 2 O 3 , and thus promoting the growth of Fe 2 O 3 to be crystalline. These results were corroborated by our transmission electron microscopy studies.
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Jain et al. (2004) studied this question.
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