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W6+-doped Bi4Ti3O12 (BIT-W) layer structured ferroelectric ceramics have been prepared and electrical properties were investigated. The electrical resistivity of BIT-W ceramics in a direct current circuit was increased obviously by W6+-doping. The ac complex impedance plot of BIT-W is different from that of undoped Bi4Ti3O12, indicating different effects of grains, grain boundaries and ferroelectric-electrode interfaces. Hysteresis loops of BIT-W were studied. W6+-doping enhances the remnant polarization because the domain pinning effect caused by oxygen vacancies reduced. Thermally stimulated depolarization current results indicated that the piezoelectric properties of BIT-W came from the polarization of intrinsic dipoles and defect dipoles.
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Zhang et al. (2006) studied this question.
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