Imprint characteristics of SrBi2Ta2O9 (SBT) thin films with modified Sr composition were investigated under elevated temperatures. A significant shift in readout charge was observed after applying unipolar pulses (dynamic imprint test) at above 100°C, while only a small shift was detected even when the capacitors were held at 150°C for up to 104 s without any electrical signals (static imprint test). The charge shift was due to the internal voltage formed by applying the unipolar pulses. Its increase, that is, degradation of dynamic imprint endurance with increasing temperature is attributed to both an increase of the internal voltage and a decrease of the coercive voltage (V c). There was no significant difference in the internal voltage between Sr deficient and Sr non-deficient SBT. SBT with a Sr deficient composition had a relatively high dynamic imprint endurance compared to the Sr non-deficient films because of higher remanent polarization and larger V c.
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Hase et al. (1998) studied this question.
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