Ferroelectric properties, crystal structure and microstructures were examined for various Sr/Bi/Ta atomic ratio strontium bismuth tantalate (SBT) films prepared by metalorganic decomposition at 700 and 800° C. The 20% Sr-deficient and 10% Bi-excess (0.8/2.2/2) composition showed maximum remanent polarization ( P r ) values for both 700 and 800° C crystallization temperatures. From TEM analysis, the P r dependence on composition variation around the stoichiometric 1/2/2 composition was related to grain size and volume of voids. The effect of postannealing after Pt top electrode fabrication was also studied. On the films prepared at 800° C, postannealing markedly reduced the capacitor shorting rate. This was attributed to recrystallization of the Pt top layer, based on SEM analysis of the Pt layer and the Pt/SBT interface.
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Noguchi et al. (1996) studied this question.
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