Enhanced diffusion processes during ion implantation: A numerical analysis

Previously reported experimental results on time evolution of Si/Pt profiles during Ar ion implantation have been analyzed on the basis of a theoretical model which accounts for the preferential sputtering and enhanced diffusion of Si atoms. Si sputtering yield reflects the energy dependence of the Ar nuclear stopping power at the SiPt mobile surface. Comparison with experimental results on metallic and dielectric systems has been performed in order to clarify the mechanism which induces the enhanced diffusion process.