Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO(2)/nanotube interface. We show that this type of memory device is robust, withstanding over 10(5) operating cycles, with a current drive capability up to 10(-6) A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.