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September 1, 1997Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

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Abstract

Reactive ion beam etching of silicon is performed at low substrate temperature (153

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Cite This Study

Chevolleau et al. (1997) studied this question.

synapsesocial.com/papers/6a9c509e989fae95632a210b https://doi.org/10.1116/1.580939

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Chemical and physical sputtering of fluorinated siliconOriginal Research · 1995 · 99 citations
2Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverageOriginal Research · 1985 · 111 citations
3Multiple photon excited SF6 interaction with silicon surfacesOriginal Research · 1981 · 113 citations
4Phenomenological modeling of ion-enhanced surface kinetics in fluorine-based plasma etchingOriginal Research · 1993 · 258 citations
5Plasma etching of Si and SiO2 in SF6–O2 mixturesOriginal Research · 1981 · 277 citations