Surface-selective x-ray topographic observations of mechanochemical polished silicon surfaces using synchrotron radiation

Surface-selective topographic observations have been performed by extremely asymmetric diffraction, in which the glancing angle of the incident x rays is near the critical angle of total reflection. This was achieved by using the wavelength tunability of synchrotron radiation. Mechanochemical polished surfaces of Si(001) and Si(111) wafers were investigated. Strain images arising from the polished surfaces were obtained by selecting the penetration depth to be several tens of nanometers.