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A method to achieve intense photoluminescence (PL) of GaN film grown on Al2O3(0001) substrates by gas-source molecular beam epitaxy (GSMBE) is proposed. It was found that the PL intensity of GaN film could be greatly enhanced by In doping during GaN growth. The PL intensity ratio of GaN:In/GaN at room temperature was 35 times stronger in magnitude, while the GaN luminescence wavelength was kept constant.
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Shen et al. (1999) studied this question.
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