An Analysis of the Effects of Low-Energy Electron Irradiation of AlGaN/GaN HFETs

The effects of low energy (0.45 MeV) electron radiation on the gate and drain currents of Al0.27Ga0.73N/GaN HFETs are investigated using IV and CV measurements. Following irradiation, the gate and drain currents increase at low temperatures and reach a saturation level. The gate leakage currents do not fully account for the drain current increase. Following a room temperature anneal, the gate and drain currents return to pre-irradiation levels. These results are explained by the buildup of positive charge in the AlGaN layer at low temperature and traps formed via a complexing precursor in the AlGaN layer near the interface. The positive charge increases the carrier concentration in the 2DEG and hence the drain current. The traps act as trap-assisted-tunneling centers that increase the gate leakage current.