Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavorable p-doping in the EBL for high Al content. To counteract these mechanisms, we employ tailored Si-doping in the quantum barriers (QBs). Experiments show a 37.5% enhancement in light-output power at high currents of one-QB-doped LEDs over all-QB-doped LEDs. These results are consistent with simulations showing that QB doping can be used to symmetrize the electron and hole distribution.