Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer

Modified AlGaN/AlN/GaN HFET structures were grown and the current collapse phenomena were examined. Pulsed I–V measurements showed that the insertion of the thin AlN interfacial layer was effective in preventing the electrons in the 2DEG channel from being transferred to the surface and bulk traps in the AlGaN barrier layer.