What question did this study set out to answer?

Determine why the quantum anomalous Hall effect in vanadium-doped (Bi, Sb)2Te3 films requires observation temperatures two orders of magnitude lower than the ferromagnetic transition temperature.

September 7, 2016Scientific ReportsOpen Access

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

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Determine why the quantum anomalous Hall effect in vanadium-doped (Bi, Sb)2Te3 films requires observation temperatures two orders of magnitude lower than the ferromagnetic transition temperature.
Measured and mapped the electronic band structure of vanadium-doped (Bi, Sb)2Te3 thin films using angle-resolved photoemission spectroscopy (ARPES).
Demonstrated that the bulk valence band maximum lies higher in energy than the surface state Dirac point.
Identified that localization of bulk valence band carriers actively contributes to the severe suppression of the quantization temperature.

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Implication

Spectroscopy study reveals bulk valence band overlap in vanadium-doped topological insulator films, indicating carrier localization suppresses the critical quantum anomalous Hall temperature.

Cite This Study

A 2016 study studied this question.

synapsesocial.com/papers/6a9c78016a0b47dac776e136 https://doi.org/10.1038/srep32732

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Implication

Spectroscopy study reveals bulk valence band overlap in vanadium-doped topological insulator films, indicating carrier localization suppresses the critical quantum anomalous Hall temperature.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

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Discussion

Implication

Cite This Study

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

Key Points

Discussion

Implication

Cite This Study

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