The time-and-frequency behavior of hot-carrier noise in submicrometer n+nn+ GaAs diodes is investigated theoretically using the Monte Carlo method. We have continuously investigated the noise from current-to-voltage operation mode by calculating the noise-power spectrum at the terminals of a noiseless load-resistance R connected in series with the diode. By varying appropriately the value of R we have calculated the small-signal impedance of the diode and then obtained the full spectrum of the noise temperature. Under voltage-operation mode the current–noise spectrum exhibits two resonant peaks at the transit-time and plasma frequencies, respectively. Under current operation mode, all current oscillations are effectively damped, and the voltage–noise spectrum exhibits a quasi-Lorentzian shape, which vanishes at the transit-time frequency. The behavior of hot-carrier noise closely parallels the frequency dependence of the diode small-signal impedance, which exhibits a dynamic negative differential resistance in the frequency range corresponding to the transit-time resonance.
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Starikov et al. (1996) studied this question.
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