Infrared Study of Hydrogen in Ultra-Thin Silicon Nitride Films Using Multiple Internal Reflection Spectroscopy (MIR) in 200 mm Silicon Wafers

We discuss the usefulness of the two-prism coupling geometry to perform non-destructive multiple internal reflection (MIR) measurements on 200 mm silicon wafers. Application to the determination of the Si–H and N–H bond concentrations in LPCVD SiN ultra-thin films, is presented. It is shown that an appropriate annealing reduces significantly the Si–H content.