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June 29, 2017ScienceOpen Access

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

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Overview

Experimental study demonstrates a 0.8-electron-volt gap in bismuthene on silicon carbide, indicating viable room-temperature quantum spin Hall applications.

Key Points

  • To design and demonstrate a room-temperature quantum spin Hall insulator using a substrate-supported monolayer with a large energy gap.
  • Modeled atomic spin-orbit coupling theoretically in a substrate-supported monolayer of a high-atomic-number element.
  • Synthesized a planar bismuth honeycomb lattice on an insulating silicon carbide substrate SiC(0001).
  • Characterized electronic structure, band gap, and edge state conductances using scanning tunneling spectroscopy.
  • Scanning tunneling spectroscopy revealed a large global energy gap of ~0.8 electron volt in the bismuthene monolayer.
  • Conductive edge states were directly observed within the energy gap, matching theoretical models.
  • The chemical potential aligned within the system gap, establishing robust, dissipationless edge conductance.

Cite This Study

A 2017 study studied this question.

synapsesocial.com/papers/6a9c88b4f106ea91856efd4fhttps://doi.org/10.1126/science.aai8142
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