A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high-temperature operation at 1GHz. The oscillator operated from 30/spl deg/C to 200/spl deg/C with an output power of 21.8dBm at 1GHz and 200/spl deg/C. The efficiency at 200/spl deg/ C is 15%. The frequency variation over the temperature range is less than 0.5%.
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Schwartz et al. (2005) studied this question.
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