Spin dependent tunnel junctions aimed for the storage element in MRAM cells were switched between low and high resistance states using 20 ns current pulses on two perpendicular conductors. Switching was done in the quasi static mode using an external field and dynamically with field pulses created on chip, For 20 ns pulse widths the introduction of a delay between the two pulses promotes the switching at lower fields and reduces the dispersion in remanent resistance values after switching.
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Sousa et al. (2000) studied this question.
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