Initial growth of Bi films on a Si(111) substrate: Two phases of √3 × √3 low-energy-electron-diffraction pattern and their geometric structures

The ordering of Bi on a Si(111)-7×{}7 surface was studied as a function of overlayer coverage and deposition conditions using low-energy-electron diffraction (LEED) and Auger electron spectroscopy. We observed a one-third-monolayer and a saturated one-monolayer phase. Both phases displayed identical {}3 ×{} {}3- R30^∘{} LEED symmetries. LEED intensity data were used to differentiate between the two phases and to determine a quantitative atomic geometry via a thorough dynamical LEED analysis.