Surface states in a Schottky diode lead to a pinning of the Fermi level and a negative temperature coefficient for the barrier height Calculations show that the barrier height of a epitaxially grown, bulk, unipolar diode actually increases with temperature, typically by about 0.4 meVK−1 for GaAs between −40°C and +80°C. This novel effect can be used to explain the improved temperature stability of devices employing these diodes as direct retrofit replacements for conventional Schottky diodes.
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Kearney et al. (1990) studied this question.
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