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The T + CH3SiD3 system has been studied to evaluate the effect of reactant pressure on parent-T yield. The substitution yields for C—H and Si—D bonds have been found to be in the ratio 1 : 1.7. The decomposition rate of the excited parent-T has been calculated on the basis of the above ratio and compared with experimental yields at low pressure. Hypotheses to explain the discrepancy between calculated and experimental values are discussed.
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Volpe et al. (1978) studied this question.
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