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The behavior of CoPtCr/SiO/sub 2/ composite thin films with variable percentages of SiO/sub 2/ (0% to 35%) is reported. From measurements of remanence curves and interaction characterization via the delta plot curves, films with 20% to 24% SiO/sub 2/ shows a wider range of switching fields and lower magnitude of interaction in comparison with the films containing a lower concentration of SiO/sub 2/.>
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El-Hilo et al. (1993) studied this question.
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