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We report on the dynamic properties of electron transport between InAs self-assembled quantum dots and n-GaAs substrate through tunneling barrier. The time constant of the electron transport was estimated by making use of the frequency dependence of the capacitance increase due to the InAs dots. The time constant ranged from microseconds to submicroseconds in samples with 40 nm tunneling barriers. The value was consistent with the theoretically calculated CR time constant.
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Horiguchi et al. (1997) studied this question.
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