We have fabricated In 0.53 Ga 0.47 As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing. The epitaxial layers of the RTD were grown on semiinsulating (100) InP substrates by molecular beam epitaxy. RTDs with a peak current density of 24.6 kA/cm 2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.
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Chen et al. (2009) studied this question.
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