Boosting photoelectrochemical performance on α-Ga₂O₃ nanowire arrays by indium cation doping for self-powered ultraviolet detection

Low power consumption, high responsivity, and self-powering are key objectives for photoelectrochemical ultraviolet detectors. In this research, In-doped α -Ga 2 O 3 nanowire arrays were fabricated on fluorine-doped tin oxide (FTO) substrates through a hydrothermal approach, with subsequent thermal annealing. These arrays were then used as photoanodes to construct a ultraviolet (UV) photodetector. In doping reduced the bandgap of α -Ga 2 O 3 , enhancing its absorption of UV light. Consequently, the In-doped α -Ga 2 O 3 nanowire arrays exhibited excellent light detection performance. When irradiated by 255 nm deep ultraviolet light, they obtained a responsivity of 38.85 mA/W. Moreover, the detector's response and recovery times are 13 and 8 ms, respectively. The In-doped α -Ga 2 O 3 nanowire arrays exhibit a responsivity that is about three-fold higher than the undoped one. Due to its superior responsivity, the In-doped device was used to develop a photoelectric imaging system. This study demonstrates that doping α -Ga 2 O 3 nanowire with indium is a potent approach for optimizing their photoelectrochemical performance, which also has significant potential for optoelectronic applications.