All-inorganic p-CsCu2I3/n-Ga2O3 heterojunctions achieve high responsivity and detectivity for UV detection, suggesting a novel approach for self-powered devices.
An all-inorganic p-CsCu 2 I 3 /n-Ga 2 O 3 NW self-powered UV photodetector is developed. Using a CuI interlayer for interface engineering, the device achieves UVA–UVC response with high responsivity (120.3 mA W −1 ) and detectivity (1.5 × 10 12 Jones).
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Luan et al. (2026) studied this question.
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