Optically addressed liquid crystal light valve utilizing GaN as both photoconductive and conductive layers

This is the authors' abstract. We don't add key points for this paper.

High laser damage threshold spatial light modulators are in urgent demand in high-power laser fields. This study employs GaN’s high laser damage threshold, broad transmission, and dual electrical/photoconductive properties to create durable optically addressed liquid crystal spatial light modulators. Using Mg-doped and Si-doped GaN as transparent electrodes and photoconductive layers, the on–off ratio of GaN-GaN OASLM can reach 662.3:1, with a resolution of 70.15 µm, a transmittance greater than 70%, the aperture of Si-doped GaN-GaN OASLM is 20mm×15mm, and that of Mg-doped GaN-GaN OASLM is 25mm×20mm. These results highlight the feasibility of GaN OASLM in high-power laser systems and are expected to solve the urgent demand for high damage threshold and large aperture spatial light modulators in laser applications.