The chemical etching characteristics of are studied through an (or AZ‐1350J photoresist) mask in the solutions of various etching systems: ( i ) , ( ii ) , ( iii ) , ( iv ) , ( v ) , ( vi ) , ( vii ) , ( viii ) , ( ix ) , and ( x ) alkaline system. The etching profiles are examined by cleaving the wafer in orthogonal directions along the (110) and ( 10) planes. Various etching profiles, such as ordinary‐mesa shaped, reverse‐mesa shaped structures, and nearly vertical walls, are formed by stripes being etched on the (001) planes. The indexes of the etch‐revealed planes are identified by making a comparison with the calculated angle between the (001) surface and etch‐side planes. The utility of these etching solutions is also discussed in detail for a variety of device applications.
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Adachi et al. (1983) studied this question.