We demonstrate a new concept for InGaAsP-InP 1.55-μm Fabry-Perot lasers integrated with spot size converters using type-A antiresonant reflecting optical waveguides. The fabrication of such devices allows to avoid the growth of thick layers of quaternary material with low Ga and As fraction, which are difficult to achieve and grow. Reduced far-field divergence angles (10/spl deg/ × 27/spl deg/) and improved coupling to cleaved standard single-mode fibers (2.6-dB coupling loss) are achieved. The proposed device is compatible with conventional epitaxial techniques and lithographic methods.
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Galarza et al. (2002) studied this question.
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