Kink and power saturation of 660-nm AlGaInP laser diodes

We analyze kink and power saturation phenomena of high power 660-nm laser diodes for DVD-R/RW experimentally. Power-current (P-I) and voltage-current (V-I) characteristics of laser diodes with different cavity lengths were measured. Using these results and thermal resistances, temperature rises caused by self-heating (/spl Delta/T) and the dependence of slope efficiencies on the temperature rise (Se-/spl Delta/T) were calculated. The slope efficiencies decreased linearly with /spl Delta/T and their gradients showed the same value regardless of the cavity length, while they had no systematic dependence on the current. The kinks occurred at the same /spl Delta/T of 30/spl deg/C regardless of the cavity length, while they occurred at different currents. These results indicate that the temperature rise caused by the self-heating is a key parameter for the kink and the saturation power. A method is proposed to calculate the kink and the saturation power using the gradient (Se-/spl Delta/T) and the kink temperature.