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The combination of the electronic and optical properties of a semiconductor hetero-junction and the acoustic properties of a piezoelectric substrate material yields a new class of very promising hybrids for potential acousto-electric and acousto-optic applications. LiNbO3/GaAs hybrids have been fabricated using the epitaxial lift-off technique resulting in unusually large acousto-electric and acousto-optic interaction between the quasi two-dimensional electron system in the semiconductor and surface acoustic waves on the piezoelectric substrate. Field effect tunability of the interaction at room temperature is demonstrated and possible device applications are discussed. Photoluminescence measurements show the influence of the acousto-electric fields on the optical properties of quantum well structures.
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Rotter et al. (1997) studied this question.
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