The interstitial in Si and Ge is investigated theoretically by using the extended perturbation theory in pseudopotential formalism developed by two of the authors (A.M. and T.S.). It is shown that the interstitial is most stable at the hexagonal site and its diffusion path is hexagonal→tetrahedral→hexagonal. The calculated migration energy of the interstitial is 0.18 eV for Si and 0.09 eV for Ge.
No takes yet. Share an insight, caveat, or question.
Soma et al. (1973) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: