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The authors describe the design and the high frequency modulation characteristics of a monolithic optoelectronic switch integrating a vertical-cavity surface-emitting laser with a GaAs heterojunction bipolar transistor. Large-signal electrical-to-optical modulation at a data rate of > 500 Mbit/s, and small-signal modulation with a 4 GHz bandwidth have been demonstrated.
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Lu et al. (1995) studied this question.
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