Luminescence of ZrO 2 and HfO 2 thin films implanted with Eu and Er ions

A spectroscopic study of Eu‐ and Er‐implanted ZrO 2 and HfO 2 thin films was performed. Photoluminescence (PL) of trivalent ions under band‐to band excitation of the host was observed. Annealing up to 1100 °C was required to maximize the PL signal intensity. The Eu 3+ ion was used as a probe of local structure. The PL excitation spectra were recorded both for intrinsic and impurity‐related emission. Different channels of indirect excitation of the RE ions were revealed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)