Electron Trapping and Interface State Generation in PMOSFET's: Results from Gate Capacitance

Significant generation of hot-carrier induced donor and acceptor interface states in PMOSFET's is observed for the first time from gate-to-drain capacitanceCgd^*s. Plotting the change ΔCgd^*sagainst gate bias reveals two peaks, attributed to donor and acceptor states. A voltage on the drain displaces the donor peak by approximately the amount of the applied voltage, but the acceptor peak shifts by a fixed amount.