Hot-carrier-induced shifts in p-channel MOSFET operating characteristics have been observed down to drain voltages of - 6 V. Cases are discussed in which p-MOSFET's show up to two orders of magnitude larger degradation than corresponding n-MOSFET's. The shifts include current and threshold voltage increases. From dependences on stress gate voltage, stress drain voltage, time, and substrate current, the hot-carrier origin of the shifts is specified in detail.
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Weber et al. (1987) studied this question.
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