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The vapor transport method was used to grow ZnO nanowires on ZnO:Al (AZO) deposited silicon substrate. The optimal characteristic of ZnO nanowires was grown at 1100°C for 70 min, together with a ZnO/graphite weight ratio of 1:1 and N2/O2 flow ratio of 7:6. ZnO nanowires had a single crystalline structure and grew with a prefer direction in the (002) plane. Photoluminescence measurement showed that UV and visible green emission bands were observed. The turn-on electric field of ZnO nanowires was 0.11 V/μm and the maximum field emission current density was 1.8 mA/cm2. A high field enhancement factor of 1782 was evaluated.
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Yang et al. (2013) studied this question.
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