Photo-electro-magnetic effect measurements of p-type Hg1−xCdxTe layers are made at 80 K as a function of the magnetic field. A negative (anomalous) effect is observed. The basic properties of the minority carriers, mobility, lifetime, surface and interface recombination rates, are determined from best fitting of the experimental data to the theory.
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Mordowicz et al. (1987) studied this question.
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