Tin oxide transparent thin-film transistors

doi:10.1088/0022-3727/37/20/006 A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600˚C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 105 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications. The majority of transparent thin-film transistors (TTFTs) reported to date have employed ZnO as a channel material