Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

The intrinsic, tunable polarization of ferroelectric oxides makes them of potential importance for next-generation electronic components based on electric rather than magnetic fields. The authors present a model to describe the rotation of ferroelectric polarization under an applied electric field, and the accompanying modulation of channel conductance in a metal-oxide-semiconductor field-effect transistor (MOSFET). Their model offers insight into both a physical mechanism and principles of device design, and promotes the optimization of fast-switching, energy-efficient nanoelectronics.