Current transient spectroscopy was adapted to quasi-compensated samples for measurement of the electron cross section for the acceptor gold level in Czochralski-grown silicon in samples with various ratios of the deep level concentration NT to the shallow level concentration ND up to NT/ND = 0.83. The value obtained, (7.05±1)×10−17 cm2, appears to be independent of the NT/ND ratio, in good agreement with previous results for lower NT/ND ratios.
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Morante et al. (1982) studied this question.
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