⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

July 1, 1995IEEE Transactions on Electron Devices

Carbon doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain

Yinqing Yang Chun-Sen Hsu E.S. Yang

View at Publisher

Ask AI

Bookmark

Share

Abstract

Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors (DHEBT's) grown by MOCVD were fabricated. DC current gain of 430 (differential gain of 500) and an offset voltage of 25 mV were obtained. A gain up to 9 was achieved at a low collector current density of 10/sup -3/ A/cm/sup 2/. By using a 600 /spl Aring/ set-back layer in the collector, the saturation (knee) voltage was found to be lower than 2 V at a collector current density of 1/spl times/10/sup 4/ A/cm/sup 2/. A cutoff frequency of 23 GHz and a maximum oscillation frequency of 17.8 GHz were obtained.>

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Yang et al. (1995) studied this question.

synapsesocial.com/papers/6a9d792d34685bd7702a0546 https://doi.org/10.1109/16.391227

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Electron saturation velocity in Ga 0.5 Inp 0.5 P measured in a GaInP/GaAs/GaInP double-heterojunction bipolar transistorOriginal Research · 1993 · 13 citations
2Small offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs double-barrier bipolar transistorOriginal Research · 1992 · 30 citations
3Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistorsOriginal Research · 1985 · 91 citations
4Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped baseOriginal Research · 1993 · 67 citations
5New AlGaAs/GaAs double heterostructure-emitter bipolar transistor prepared by molecular beam epitaxyOriginal Research · 1992 · 7 citations

More related papers

An improved heterostructure-emitter bipolar transistor (HEBT)1991
The study of emitter thickness effect on the heterostructure emitter bipolar transistors1993
Inverted thin-film transistors with a simple self-aligned lightly doped drain structure1992

More from IEEE Transactions on Electron Devices

Investigation on the Cumulative Degradation in p-GaN Gate HEMTs Under Synergistic Electrical Stress and Heavy Ion IrradiationFri,
P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and CharacterizationTue,