The first (not necessarily typical) performance measurements on Ga0.5In0.5P/GaAs/Ga0.5In0.5P double-heterojunction bipolar transistors are reported. The measured cutoff frequency and maximum oscillation frequency are 25 and 35GHz, respectively. From various measurements of fT under various bias conditions, the value of the electron saturation velocity in GaInP is determined to be 4.4 × 106cm/s.
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Liu et al. (1993) studied this question.
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