We report the high-power and reliable operation of InGaAsP/InGaP/AlGaAs 0.8 µ m separate confinement heterostructure single-quantum-well laser diodes. High output power of 1.8 W is achieved from an anti-reflection- and high-reflection-coated device with stripe width of 50 µ m and cavity length of 1.25 mm. This device has high characteristic temperature of 164 K and low threshold current density of 300 A/cm2. No catastrophic failure in the laser with 0.75 mm cavity length is observed during 1000 h aging test at 50° C under an automatic power control of 500 mW. The effect of cavity length on laser characteristics is also discussed.
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Fukunaga et al. (1995) studied this question.
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