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InAs/AlSb resonant tunneling heterostructures have been studied by ballistic electron emission spectroscopy. Current thresholds attributed to quasibound states in the quantum well and emission over the AlSb barriers are observed. The observed shape of thresholds is consistent with inelastic processes in the InAs layers of the structures, where a high number of electron–hole pairs are generated. A threshold consistent with the generation of electron–hole pairs in quantum well states is observed.
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Walachová et al. (1997) studied this question.
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