What question did this study set out to answer?

To determine the energy-dependent electron-hole pair-production rate and evaluate the mechanisms of impact ionization in silicon for electron energies up to 5 eV.

June 21, 1993Applied Physics Letters

Impact ionization in silicon

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To determine the energy-dependent electron-hole pair-production rate and evaluate the mechanisms of impact ionization in silicon for electron energies up to 5 eV.
Measured high-energy electron dynamics up to 5 eV using soft x-ray photoemission spectroscopy.
Performed Monte Carlo simulations combining photoemission measurements with literature data on the ionization coefficient and quantum yield.
Observed a very soft pair-production onset threshold at 1.2 eV, which converges with Kane's theoretical rate at higher electron energies.
Identified that several previously published theoretical models are incompatible with the comprehensive experimental dataset.

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Implication

Experimental and computational analysis demonstrates a soft threshold of 1.2 eV for electron pair production in silicon, highlighting limitations in existing impact ionization models.

Cite This Study

Cartier et al. (1993) studied this question.

synapsesocial.com/papers/6a92f3b68776eb66b78eff98 https://doi.org/10.1063/1.109064

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Implication

Experimental and computational analysis demonstrates a soft threshold of 1.2 eV for electron pair production in silicon, highlighting limitations in existing impact ionization models.

Impact ionization in silicon

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Discussion

Implication

Cite This Study

Impact ionization in silicon

Key Points

Discussion

Implication

Cite This Study

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