Calculation of the Electron Emission Coefficient during Fast Ion Passage through Silicon

A method based on perturbation theory for describing ionization ion-atom collisions and an algorithm for statistical modeling of secondary electron trajectories is proposed for calculating the electron emission coefficient from a structureless solid target. The main contribution to the number of electrons emitted by the surface is made by electrons with energy E < 50 eV. Only a small target layer with a thickness of 20–40 Å determines the number of electrons emitted by the surface. If the target thickness exceeds this value, the electron emission coefficient does not depend on the target thickness. The change in the energy and charge of a fast ion in such a thin layer can be ignored, and the energy and charge of an ion emitted from the target can be used to estimate the number of secondary electrons.