Investigation of Electron-Induced Secondary Electron Emission Behavior of Silicon Compounds

Secondary electron emission (SEE) in silicon compounds has a significant impact on the performance and reliability of silicon-based vacuum devices. This work investigates the electron-induced SEE behavior of three typical silicon compounds: SiC, Si3N4, and SiO2. The SEE coefficient (SEEC) maximum values are 1.77 for SiC, 2.38 for Si3N4, and 3.41 for SiO2, with SiO2 having the strongest emission capability. A theoretical model covering incident electron energy loss, internal secondary electron excitation, migration, and surface escape was established. The calculated results are consistent with experimental data in the 200–1500 eV range, and the results of the error analysis show that, within the applicable energy range, the deviation between the theoretical calculations and the experimental results is less than 6% on average.