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Group III–V compound semiconductors are used widely in electronic and optoelectronic applications. Of this group of materials, indium antimonide is particularly well suited for use in high-speed devices as it has a small bandgap and the largest room-temperature carrier mobility. Here, a new method for the synthesis of InSb (and related GaSb) is presented that sidesteps many of the problems of current methods, for example, high temperatures, air stability, or general complexity.
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Li et al. (2001) studied this question.
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